APTGT100SK120D1G Microsemi Power Products Group, APTGT100SK120D1G Datasheet - Page 3

• Manufacturer Part Number: APTGT100SK120D1G
• Description: IGBT 1200V 150A 520W D1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100SK120D1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 3mA
• Input Capacitance (cies) @ Vce: 7nF @ 25V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Thermal and package characteristics
Typical Performance Curve
Symbol Characteristic
Torque
D1 Package outline
V
R
T
Wt
T
T
ISOL
STG
thJC
C
J
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
(dimensions in mm)
50
40
30
20
10
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Operating Frequency vs Collector Current
switching
0.05
0.9
0.7
0.5
0.1
0.3
Hard
20
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
ZVS
40
0.0001
ZCS
60
I
C
(A)
80
V
D=50%
R
T
T
100
J
C
CE
G
=125°C
=75°C
=7.5 Ω
=600V
0.001
120
rectangular Pulse Duration (Seconds)
www.microsemi.com
140
For terminals
To Heatsink
Single Pulse
0.01
APTGT100SK120D1G
200
150
100
50
0
0
0.1
Forward Characteristic of diode
Diode
0.4
IGBT
M5
M6
T
J
=125°C
0.8
V
1.2
F
T
(V)
J
1
=25°C
4000
Min
-40
-40
-40
1.6
2
3
Diode
2
Typ
10
2.4
Max
0.24
0.48
150
125
125
180
3.5
5
°C/W
Unit
N.m
°C
V
g
3 - 4