APTGT100SK120D1G Microsemi Power Products Group, APTGT100SK120D1G Datasheet - Page 4

• Manufacturer Part Number: APTGT100SK120D1G
• Description: IGBT 1200V 150A 520W D1
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT100SK120D1G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 100A
• Current - Collector (ic) (max): 150A
• Current - Collector Cutoff (max): 3mA
• Input Capacitance (cies) @ Vce: 7nF @ 25V
• Power - Max: 520W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
200
150
100
200
150
100
35
30
25
20
15
10
0.25
0.15
0.05
50
50
Switching Energy Losses vs Gate Resistance
5
0
0.2
0.1
0
0
0.00001
0
0
5
0
V
T
Output Characteristics (V
V
I
CE
C
J
0.9
0.3
GE
0.7
0.5
0.1
= 125°C
6
= 100A
0.05
= 600V
8
Transfert Characteristics
=15V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
1
T
7
J
16
=25°C
0.0001
8
V
V
CE
GE
24
2
(V)
T
(V)
J
=25°C
9
32
10
T
GE
J
=125°C
3
T
Eon
=15V)
J
=125°C
rectangular Pulse Duration (Seconds)
40
0.001
11
Eoff
Err
www.microsemi.com
Single Pulse
48
12
4
0.01
APTGT100SK120D1G
240
200
160
120
35
30
25
20
15
10
200
150
100
80
40
5
0
50
0
0
0
0
0
V
T
R
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
V
T
R
V
J
GE
G
25
=125°C
CE
J
T
0.1
GE
G
=7.5 Ω
= 125°C
J
=15V
= 7.5 Ω
= 600V
= 125°C
= 15V
400
50
Output Characteristics
1
75 100 125 150 175 200
V
GE
I
C
V
=17V
800
(A)
CE
V
CE
2
(V)
1
(V)
IGBT
Eoff
1200
V
GE
3
=15V
V
V
Eon
GE
GE
=13V
=9V
Err
1600
10
4
4 - 4