APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 10

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APTGV50H120BTPG

Manufacturer Part Number
APTGV50H120BTPG
Description
IGBT NPT BST CHOP FULL BRDG SP6P
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGV50H120BTPG

Igbt Type
NPT, Trench and Field Stop
Configuration
Boost Chopper, Full Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 50A
Current - Collector (ic) (max)
75A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
3.6nF @ 25V
Power - Max
270W
Input
Standard
Ntc Thermistor
Yes
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
180
140
100
18
16
14
12
10
45
40
35
30
25
60
20
28
24
20
16
12
8
6
4
2
0
8
4
0
Switching Energy Losses vs Gate Resistance
0
0
0
0
Turn-On Delay Time vs Collector Current
Turn-On Energy Loss vs Collector Current
V
R
Current Rise Time vs Collector Current
V
V
T
CE
V
R
G
Eon, 50A
CE
GE
J
CE
G
= 5Ω
I
= 125°C
I
V
CE
I
= 600V
CE
= 5Ω
CE
= 600V
CE
R
= 600V
= 15V
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
G
10
25
, Collector to Emitter Current (A)
25
25
= 600V
= 5Ω
Gate Resistance (Ohms)
20
50
50
50
V
T
GE
V
J
=125°C,
GE
=15V
Eoff, 25A
=15V
75
75
75
30
T
V
V
J
GE
=25°C,
GE
=15V
= 15V
Eoff, 50A
100
100
100
Eon, 25A
40
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125
125
125
50
APTGV50H120BTPG
400
350
300
250
200
120
100
50
40
30
20
80
60
40
20
8
6
4
2
0
0
0
0
0
0
Turn-Off Energy Loss vs Collector Current
V
Turn-Off Delay Time vs Collector Current
V
R
Current Fall Time vs Collector Current
CE
CE
G
V
Reverse Bias Safe Operating Area
I
I
V
I
, Collector to Emitter Voltage (V)
CE
= 5Ω
CE
CE
CE
R
= 600V
GE
G
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
, Collector to Emitter Current (A)
= 600V
25
25
25
= 15V
= 5Ω
T
V
J
CE
= 125°C
400
= 600V, V
50
50
50
T
J
= 25°C
GE
= 15V, R
800
75
75
T
75
V
J
T
T
GE
= 125°C
T
J
V
J
=25°C
J
= 25°C
GE
=15V,
=125°C
G
=15V,
= 5Ω
100
100
100
1200
125
125
125
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