APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 7

• Manufacturer Part Number: APTGV50H120BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV50H120BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol Characteristic
Torque
V
T
Wt
T
T
ISOL
STG
C
J
* Tj=175°C for Trench & Field Stop IGBT
5. Package characteristics
6. SP6-P Package outline (dimensions in mm)
7. Full bridge top switches curves
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
7.1 Top Trench + Field Stop IGBT typical performance curves
100
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
80
60
40
20
0
0
Output Characteristics (V
0.5
1
1.5
V
T
CE
J
=25°C
(V)
2
2.5
GE
T
=15V)
J
=125°C
3
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3.5
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
To heatsink
APTGV50H120BTPG
100
80
60
40
20
0
0
M6
T
J
= 125°C
1
Output Characteristics
2500
Min
-40
-40
-40
2.5
V
GE
V
=17V
CE
2
(V)
Typ
V
9 places (3:1)
GE
3
=15V
V
V
Max
150*
GE
GE
125
100
250
4.7
=13V
=9V
4
Unit
N.m
°C
V
g
7 - 13