APTGV50H120BTPG Microsemi Power Products Group, APTGV50H120BTPG Datasheet - Page 13

• Manufacturer Part Number: APTGV50H120BTPG
• Description: IGBT NPT BST CHOP FULL BRDG SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGV50H120BTPG

• Igbt Type: NPT, Trench and Field Stop
• Configuration: Boost Chopper, Full Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 50A
• Current - Collector (ic) (max): 75A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 3.6nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.8
0.6
0.4
0.2
9.2 Chopper diode typical performance curves
0.00001
1
0
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
0.9
0.3
0.7
0.5
0.1
0.05
0.0001
160
140
120
100
Rectangular Pulse Duration (Seconds)
80
60
40
20
0.001
0
0.0
Forw ard Current vs Forw ard Voltage
V
www.microsemi.com
F
, Anode to Cathode Voltage (V)
1.0
T
J
=1 25°C
Single Pulse
0.01
2.0
APTGV50H120BTPG
T
J
=25°C
3.0
0.1
4.0
1
10
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