APTGL325DA120D3G Microsemi Power Products Group, APTGL325DA120D3G Datasheet

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APTGL325DA120D3G

Manufacturer Part Number
APTGL325DA120D3G
Description
IGBT 1200V 420A 1500W D3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTGL325DA120D3G

Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 300A
Current - Collector (ic) (max)
420A
Current - Collector Cutoff (max)
5mA
Input Capacitance (cies) @ Vce
18.6nF @ 25V
Power - Max
1500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
RBSOA
Symbol
V
V
I
P
I
CM
CES
C
GE
D
Trench + Field Stop IGBT4
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
Boost chopper
Power Module
6
7
Q2
Parameter
1
3
2
www.microsemi.com
T
T
T
T
T
C
C
C
C
j
= 125°C
= 25°C
= 80°C
= 25°C
= 25°C
Application
Features
Benefits
APTGL325DA120D3G
600A @ 1100V
Max ratings
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
Trench + Field Stop IGBT 4 Technology
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
RoHS Compliant
1200
1500
420
325
600
±20
-
-
-
-
-
-
V
I
C
CES
Low voltage drop
Low leakage current
Low switching losses
Soft recovery parallel diodes
Low diode VF
RBSOA and SCSOA rated
= 325A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGL325DA120D3G Summary of contents

Page 1

... GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGL325DA120D3G Application 3 • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction ...

Page 2

... Maximum Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current RRM I DC Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy rr APTGL325DA120D3G = 25°C unless otherwise specified j Test Conditions 1200V 25° 15V 300A T = 125°C C ...

Page 3

... RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight (dimensions in mm) D3 Package outline A APTGL325DA120D3G Min IGBT Diode 2500 -40 -40 -40 For terminals Heatsink M6 3 1° DÉTAIL A www.microsemi.com Typ ...

Page 4

... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 0 0.00001 0.0001 APTGL325DA120D3G =15V) GE 600 T J 500 400 T =150°C J 300 200 100 (V) Energy losses vs Collector Current ...

Page 5

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGL325DA120D3G Forward Characteristic of diode 600 ...

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