APTGL325DA120D3G Microsemi Power Products Group, APTGL325DA120D3G Datasheet - Page 4

• Manufacturer Part Number: APTGL325DA120D3G
• Description: IGBT 1200V 420A 1500W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL325DA120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 18.6nF @ 25V
• Power - Max: 1500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
600
500
400
300
200
100
90
75
60
45
30
15
0.12
0.08
0.06
0.04
0.02
600
500
400
300
200
100
Switching Energy Losses vs Gate Resistance
0
0.1
0
0.00001
0
0
0
5
0
V
T
V
I
CE
C
J
Output Characteristics (V
GE
= 150°C
= 300A
0.3
0.1
6
0.05
0.9
0.7
0.5
= 600V
T
=15V
Transfert Characteristics
J
=150°C
Gate Resistance (ohms)
2.5
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
1
8
0.0001
T
J
=25°C
V
V
GE
CE
5
9
2
(V)
(V)
T
10
J
=25°C
T
7.5
GE
11
J
=150°C
3
=15V)
rectangular Pulse Duration (Seconds)
0.001
Eoff
Eon
Err
12
10
13
4
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Single Pulse
0.01
APTGL325DA120D3G
600
500
400
300
200
100
600
450
300
150
80
60
40
20
0
0
0
0
0
0
V
V
R
T
Energy losses vs Collector Current
Reverse Bias Safe Operating Area
J
CE
GE
G
T
= 150°C
V
T
R
0.1
= 1.5.Ω
J
Err
J
= 600V
= 15V
GE
G
=150°C
100
=1.5Ω
= 150°C
=15V
300
Output Characteristics
1
200
600
I
V
V
V
C
300
GE
CE
CE
(A)
2
=19V
1
(V)
(V)
900
400
IGBT
1200
3
V
500
V
GE
GE
Eon
=15V
=9V
Eoff
1500
10
600
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