APTGL325DA120D3G Microsemi Power Products Group, APTGL325DA120D3G Datasheet - Page 5

• Manufacturer Part Number: APTGL325DA120D3G
• Description: IGBT 1200V 420A 1500W D3
• Manufacturer: Microsemi Power Products Group

Specifications of APTGL325DA120D3G

• Igbt Type: Trench and Field Stop
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 300A
• Current - Collector (ic) (max): 420A
• Current - Collector Cutoff (max): 5mA
• Input Capacitance (cies) @ Vce: 18.6nF @ 25V
• Power - Max: 1500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: D3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
180
150
120
90
60
30
0
0.18
0.15
0.12
0.09
0.06
0.03
Operating Frequency vs Collector Current
0.00001
0
0
switching
Hard
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.1
0.3
0.05
120
ZCS
0.0001
ZVS
I
240
C
(A)
Diode
V
D=50%
R
T
Tc=75°C
360
CE
J
G
=150°C
=1.5 Ω
=600V
Rectangular Pulse Duration in Seconds
0.001
480
Single Pulse
www.microsemi.com
0.01
APTGL325DA120D3G
600
450
300
150
0
0
0.1
Forward Characteristic of diode
0.4
T
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
=25°C
1.6
2
10
2.4
5 - 5