FMG2G50US120 Fairchild Semiconductor, FMG2G50US120 Datasheet - Page 2

• Manufacturer Part Number: FMG2G50US120
• Description: IGBT POWER MOD 1200V 50A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G50US120

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 50A
• Current - Collector (ic) (max): 50A
• Current - Collector Cutoff (max): 3mA
• Power - Max: 320W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Input Capacitance (cies) @ Vce: -
• Other names: FMG2G50US120_NL; FMG2G50US120_NL

©2004 Fairchild Semiconductor Corporation
Electrical Characteristics of IGBT
Electrical Characteristics of DIODE
Thermal Characteristics
Off Characteristics
BV
∆B
∆T
I
I
On Characteristics
V
V
Switching Characteristics
t
t
t
t
E
E
t
t
t
t
E
E
T
Q
Q
Q
V
t
I
Q
R
R
R
Weight
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
Symbol
Symbol
sc
GE(th)
CE(sat)
on
off
on
off
FM
θJC
θJC
θJC
g
ge
gc
rr
J
VCES
CES
Symbol
/
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
Gate - Emitter Leakage Current
Gate - Emitter Threshold Voltage
Collector to Emitter Saturation Voltage
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery Charge
Weight of Module
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink
Parameter
Parameter
(Conductive grease applied)
Parameter
I
di / dt = 700 A/us
I
F
F
= 50A
= 50A
V
V
V
V
V
R
Inductive Load, T
V
R
Inductive Load, T
V
@
V
V
I
I
T
C
C
GE
GE
CE
GE
CC
CC
CC
CE
GE
G
G
C
T
T
= 50A
=50mA, V
= 25°C unless otherwise noted
= 10Ω, V
=10Ω, V
C
C
= V
= 300 V, I
= 0V, I
= 0V, I
= V
= 600 V, I
= 600 V, I
= 600 V, V
= 15V
Test Conditions
= 25°C unless otherwise noted
= 100°C
Test Conditions
CES
GES
,
C
C
, V
GE
, V
V
GE
= 3mA
= 1mA
CE
GE
C
C
C
GE
CE
= 15V,
GE
= 15V,
=50A,
=50A,
= 50A,
= V
= 15V
C
C
= 0V
= 0V
= 15V
T
T
T
T
T
T
T
T
= 25°C
= 125°C
GE
C
C
C
C
C
C
C
C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
0.035
Typ.
240
--
--
1200
Min.
5.0
Min.
10
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Max.
0.39
0.47
Typ.
4.68
3.48
180
400
175
390
120
400
210
2320
3960
Typ.
--
0.6
7.0
2.6
5.6
4.4
--
160
220
80
65
75
60
2.3
2.2
--
--
--
--
29
36
± 100
Max.
150
8.5
3.0
Max.
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
3
3.0
--
--
--
--
--
--
--
FMG2G50US120 Rev. A
Units
°C/W
°C/W
°C/W
g
Units
V/°C
mA
mJ
mJ
mJ
mJ
nC
nC
nC
nA
Unit
ns
ns
ns
ns
ns
ns
ns
ns
us
V
V
V
nC
ns
V
A
s