HGT1N40N60A4D Fairchild Semiconductor, HGT1N40N60A4D Datasheet
HGT1N40N60A4D
Specifications of HGT1N40N60A4D
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HGT1N40N60A4D Summary of contents
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... Data Sheet 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N40N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor ...
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... CES V = 15V - 350 20V - 450 145 - 35 - 400 - 850 - 370 o = 125 185 - 55 - 400 - 1220 - 660 - 2.25 UNITS N-m N-m MAX UNITS - V µ A 250 3.0 mA 2 ± 250 405 nC 520 µ µ µ 225 µ µ J 1400 µ J 775 2.7 V HGT1N40N60A4D Rev. B ...
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... V , COLLECTOR TO EMITTER VOLTAGE ( 390V 2.2Ω 125 GATE TO EMITTER VOLTAGE (V) GE FIGURE 4. SHORT CIRCUIT WITHSTAND TIME MAX UNITS 0.42 C/W o 1.8 C/W is the ON2 500 600 700 1200 1000 800 600 400 200 15 16 HGT1N40N60A4D Rev. B ...
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... COLLECTOR TO EMITTER VOLTAGE ( 2.2Ω 200mH 390V 125 12V OR 15V J GE 800 600 400 200 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT R = 2.2Ω 200mH 390V 125 12V 125 COLLECTOR TO EMITTER CURRENT (A) CE EMITTER CURRENT 1.75 2.0 2.25 2.5 = 12V OR 15V 15V HGT1N40N60A4D Rev. B ...
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... COLLECTOR TO EMITTER CURRENT (A) CE CURRENT 1mA 7.5Ω G(REF 600V 400V 200V 100 150 200 250 Q , GATE CHARGE (nC) G FIGURE 14. GATE CHARGE WAVEFORMS 125 390V 15V TOTAL ON2 OFF 80A 40A 20A CE 0 GATE RESISTANCE (Ω 300 350 400 100 500 HGT1N40N60A4D Rev. B ...
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... EC 110 100 o 125 125 125 FORWARD CURRENT (A) EC 1400 V = 390V CE 1200 o 125 40A F 1000 800 600 400 200 0 200 400 600 di /dt, RATE OF CHANGE OF CURRENT (A/µs) EC CURRENT = 15V 80A 40A 20A 125 20A 40A 20A F 800 1000 HGT1N40N60A4D Rev. B ...
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... L = 100µ 2.2Ω G HGT1N40N60A4D FIGURE 24. INDUCTIVE SWITCHING TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation (Unless Otherwise Specified) (Continued) DUTY FACTOR PEAK RECTANGULAR PULSE DURATION (s) 1 HGT1N40N60A4D 390V θJC θ 90% 10% E ON2 E OFF 90% 10% t d(OFF d(ON)I FIGURE 25. SWITCHING TEST WAVEFORMS HGT1N40N60A4D Rev ...
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... P )/( MAX2 D C OFF ) is defined 50% duty factor was used (Figure 3) and D ) are approximated )/2. CE are defined in the switching waveforms OFF is the integral of the instantaneous ON2 during turn-on and OFF HGT1N40N60A4D Rev d(OFF)I ). The ON2 - T )/R . θ the ) during CE = 0). ...
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... Rev. 0 8/00 HGT1N40N60A4D Rev. B NOTES - - - - - - - - - - - - - - - - - - - ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...