FMS7G10US60 Fairchild Semiconductor, FMS7G10US60 Datasheet - Page 64

• Manufacturer Part Number: FMS7G10US60
• Description: IGBT 600V 10A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS7G10US60

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.71nF @ 30V
• Power - Max: 66W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

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TO-220F
FQPF85N06
FQPF65N06
FQPF50N06L
FQPF50N06
FQPF30N06L
FQPF30N06
FQPF20N06L
FQPF20N06
FQPF13N06L
FQPF13N06
FQPF44N08
FQPF17N08L
FQPF17N08
FQPF9N08
FQPF9N08L
IRLS540A
IRLS520A
IRLS510A
FQPF90N10V2
FQPF70N10
FQPF55N10
FQPF44N10
FQPF33N10
IRFS540A
FQPF33N10L
FQPF19N10
FQPF19N10L
IRFS530A
FQPF13N10
FQPF13N10L
IRFS520A
FQPF7N10
FQPF7N10L
IRFS510A
TO-220F N-Channel
Products
Min. (V)
BV
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
60
60
60
60
60
60
60
60
60
60
80
80
80
80
80
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.016
0.021
0.022
0.035
0.055
0.135
0.034
0.115
0.025
0.026
0.039
0.052
0.052
0.052
10V
0.01
0.04
0.06
0.11
0.21
0.21
0.01
0.11
0.18
0.18
0.35
0.35
0.1
0.1
0.1
0.2
0.4
–
–
–
R
0.025@5V
0.045@5V
0.115@5V
0.058@5V
0.055@5V
DS(ON)
0.07@5V
0.14@5V
0.23@5V
0.22@5V
0.44@5V
0.11@5V
0.38@5V
0.2@5V
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-59
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
24.5
11.5
38.4
10.2
146
GS
9.5
4.8
5.8
8.8
5.9
4.7
5.5
8.7
5.8
4.6
8.5
86
48
31
15
19
38
12
85
75
48
38
60
30
19
14
27
12
16
=5V
I
D
32.6
22.5
15.7
11.2
11.2
34.2
13.6
13.6
10.7
9.4
7.2
4.5
8.7
8.7
7.2
5.5
5.5
4.5
53
40
31
21
15
10
25
17
90
35
27
18
17
18
7
7
(A)
MOSFETs
P
D
62
56
47
47
38
39
30
30
24
24
41
30
30
23
23
44
30
23
83
62
60
55
41
39
41
38
38
32
30
30
28
23
23
21
(W)