FMS7G10US60S Fairchild Semiconductor, FMS7G10US60S Datasheet - Page 7

• Manufacturer Part Number: FMS7G10US60S
• Description: IGBT 600V 10A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS7G10US60S

• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 10A
• Current - Collector (ic) (max): 10A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 0.71nF @ 30V
• Power - Max: 66W
• Input: Single Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

FMS7G10US60S Rev. B1
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
Figure 17. Forward Characteristics
40
35
30
25
20
15
10
1 0 0 0
5
0
1 0 0
0 . 0 1
1 0 0
0 . 1
0
1 0
1
Common Cathode
V
T
T
5
0 . 1
C
C
GE
I
= 25 ℃
= 125 ℃
Common Emitter
V
T
T
I
C
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
= 0V
GE
C
C
MAX. (Continuous)
MAX. (Pulsed)
= 25 ℃ ℃℃
= 125
= ± 15 V, R
C o l l e c t o r - E m i t t e r
C
℃
= 25 ℃
1
------
Forward Voltage, V
C o l l e c t o r C u r r e n t , I
1
G
= 20 Ω
1 0
DC Operation
2
1 0
V o l t a g e , V
F
[V]
1 5
C
3
[ A ]
1ms
1 0 0
C E
100us
[ V ]
50us
E o f f
E o n
E o f f
4
1 0 0 0
2 0
(Continued)
7
Figure 14. Gate Charge Characteristics
Figure 16. RBSOA Characteristics
Figure 18. Reverse Recovery Characteristics
1 5
1 2
9
6
3
0
0
0.1
50
10
1
0.1
Common Emitter
R
T
20
10
C
L
1
0
= 30 Ω
= 25
2
Single Nonrepetitive
Pulse T
V
R
5
GE
G
o
= 20
C
= 15V
100
1 0
J
Ω
≤ 125 ℃
G a t e C h a r g e , Q
Collector-Emitter Voltage, V
4
200
1 5
Forward Current, I
V
C C
= 1 0 0 V
2 0
6
300
2 5
g
400
[ n C ]
8
2 0 0 V
F
3 0
Common Cathode
di/dt = 20A/ ㎲
T
T
[A]
3 0 0 V
C
C
500
= 25 ℃
= 100
CE
www.fairchildsemi.com
[V]
3 5
10
℃
600
I
rr
---------
T
rr
4 0
12
700