FMS6G20US60 Fairchild Semiconductor, FMS6G20US60 Datasheet - Page 7

• Manufacturer Part Number: FMS6G20US60
• Description: IGBT 600V 20A 25PM-AA
• Manufacturer: Fairchild Semiconductor

Specifications of FMS6G20US60

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 20A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.277nF @ 30V
• Power - Max: 89W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: 25PM-AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

FMS6G20US60 Rev. B1
Typical Performance Characteristics
Figure 13. Switching Loss vs. Collector Current
Figure 15. SOA Characteristics
Figure 17. Forward Characteristics
1 0 0 0 0
1 0 0 0
0.01
1 0 0
100
40
35
30
25
20
15
10
0.1
10
5
0
1
0
1 0
0.3
I
Common Cathode
V
T
T
Common Emitter
V
T
T
I
C
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
C
C
C
GE
GE
C
C
MAX. (Continuous)
MAX. (Pulsed)
= 25 ℃
= 125 ℃
= 25 ℃ ℃℃
= 125
= 0V
= ± 15V, R
1 5
C
℃
= 25 ℃
Collector-Emitter Voltage, V
------
C o l l e c t o r C u r r e n t , I
1
1
G
Forward Voltage, V
= 10
2 0
Ω
DC Operation
2
2 5
10
C
F
3 0
1 ms
[V]
[ A ]
CE
100
3
E o n
[V]
100us
3 5
50us
E o f f
E o f f
1000
4 0
4
(Continued)
7
Figure 14. Gate Charge Characteristics
Figure 16. RBSOA Characteristics
Figure 18. Reverse Recovery Characteristics
1 5
1 2
9
6
3
0
0
0.1
0.1
20
10
80
10
1
Common Emitter
R
T
1
C
L
= 15
= 25
0
Single Nonrepetitive
Pulse T
V
R
3
GE
G
1 0
Ω
o
= 10
C
= 15V
100
J
Ω
≤ 125 ℃
6
G a t e C h a r g e , Q
Collector-Emitter Voltage, V
2 0
Forward Current, I
200
9
3 0
300
V
C C
12
= 1 0 0 V
g
400
[ n C ]
4 0
F
2 0 0 V
15
Common Cathode
di/dt = 40A/us
T
T
[A]
C
C
500
= 25 ℃
= 100
CE
5 0
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3 0 0 V
[V]
℃
18
600
--------
6 0
T
I
rr
rr
21
700