FMG2G100US60 Fairchild Semiconductor, FMG2G100US60 Datasheet - Page 4

• Manufacturer Part Number: FMG2G100US60
• Description: IGBT MOLDING 600V 100A 7PM-GA
• Manufacturer: Fairchild Semiconductor

Specifications of FMG2G100US60

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 100A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 10.84nF @ 30V
• Power - Max: 400W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: 7PM-GA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

©2001 Fairchild Semiconductor Corporation
Fig 5. Saturation Voltage vs. V
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
240
210
180
150
120
90
60
30
20
16
12
0
5
4
3
2
1
0
8
4
0
0
0
0
Common Emitter
V
Common Emitter
T
Common Emitter
T
GE
C
Temperature at Variant Current Level
C
= 25
= 25
= 15V
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
2
Case Temperature, T
I
C
50
= 50A
20V
8
15V
4
100A
12
200A
100
C
[ ]
GE
GE
CE
[V]
6
[V]
16
V
GE
I
C
200A
100A
= 10V
= 50A
12V
150
20
8
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
120
100
250
200
150
100
80
60
40
20
50
20
16
12
0
8
4
0
0
0.1
0.3
0
Duty cycle : 50%
T
Power Dissipation = 130W
Common Emitter
V
T
T
C
Common Emitter
T
GE
C
C
= 100
C
= 25
= 125
= 15V
= 125
Collector - Emitter Voltage, V
4
Gate - Emitter Voltage, V
1
I
1
C
= 50A
Frequency [Khz]
8
V
Load Current : peak of square wave
CC
= 300V
10
100A
12
GE
GE
200A
100
CE
[V]
[V]
16
10
FMG2G100US60 Rev. A
1000
20
20