APT200GN60JG Microsemi Power Products Group, APT200GN60JG Datasheet
APT200GN60JG
Specifications of APT200GN60JG
Related parts for APT200GN60JG
APT200GN60JG Summary of contents
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TYPICAL PERFORMANCE CURVES Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight ...
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Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res Gate-to-Emitter Plateau Voltage V GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...
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V = 15V T = -55° 350 T = 25°C J 300 T = 125°C J 250 T = 175°C J 200 150 100 0.5 1.0 1.5 2.0 2 COLLECTER-TO-EMITTER VOLTAGE (V) ...
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V = 15V 400V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On ...
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TYPICAL PERFORMANCE CURVES 20,000 10,000 5000 1000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.20 0.7 0.15 0.5 0.10 0.3 0.05 0.1 0. ...
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APT100DQ60 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) Collector Current 90 10% Collector Voltage Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T = 125°C ...