APT200GN60JG Microsemi Power Products Group, APT200GN60JG Datasheet - Page 3

• Manufacturer Part Number: APT200GN60JG
• Description: IGBT 600V 283A 682W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT200GN60JG

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 200A
• Current - Collector (ic) (max): 283A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 14.1nF @ 25V
• Power - Max: 682W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
400
350
300
250
200
150
100
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
50
0
0
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
J
0.5
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
2
T
T
10
T
T
0
J
J
J
J
= 175°C
= -55°C
= 25°C
= 125°C
1.0
4
25
T
J
T
T
1.5
12
50
= 125°C
J
J
6
= -55°C
= 25°C
75 100 125 150
2.0
8
14
2.5
10
J
= 25°C)
3.0
16
12
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
400
350
300
250
200
150
100
400
350
300
250
200
150
100
3.0
2.5
2.0
1.5
1.0
0.5
50
16
14
12
10
50
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50 -25
V
0
0
0
CE
I
T
C
<0.5 % DUTY CYCLE
J
250µs PULSE TEST
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 200A
= 25°C
15V
200
25
V
T
5
GE
T
C
J
= 15V.
, Junction Temperature (°C)
0
, CASE TEMPERATURE (°C)
FIGURE 4, Gate Charge
V
V
400
50
CE
CE
GATE CHARGE (nC)
10
25
= 120V
= 300V
600
75
50
9V
15
800
100
75 100 125 150 175
20
1000 1200 1400
125
25
7.5V
J
150
= 125°C)
7V
175
30