APT200GN60JG Microsemi Power Products Group, APT200GN60JG Datasheet - Page 5

• Manufacturer Part Number: APT200GN60JG
• Description: IGBT 600V 283A 682W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT200GN60JG

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 200A
• Current - Collector (ic) (max): 283A
• Current - Collector Cutoff (max): 25µA
• Input Capacitance (cies) @ Vce: 14.1nF @ 25V
• Power - Max: 682W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Case temperature. (°C)
20,000
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5000
1000
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp. (°C)
V
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
20
RC MODEL
10
-4
0.0463
0.132
0.0414
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
10
ies
0es
res
-3
0.0120
0.483
8.30
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
60
10
1
40
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 1.0Ω
700
600
500
400
300
200
100
60
= 400V
Figure 18,Minimim Switching Safe Operating Area
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
80
10
CE
-1
100
, COLLECTOR TO EMITTER VOLTAGE
100 120 140 160 180 200
200
Note:
Peak T J = P DM x Z θJC + T C
300
Duty Factor D =
1.0
400
t 1
t 2
500
t 1
/
t 2
600
F
f
f
P
max1
max2
APT200GN60J
max
diss
700
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f