APT75GN120JDQ3G Microsemi Power Products Group, APT75GN120JDQ3G Datasheet

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APT75GN120JDQ3G

Manufacturer Part Number
APT75GN120JDQ3G
Description
IGBT 1200V 124A 379W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT75GN120JDQ3G.pdf (9 pages)

Specifications of APT75GN120JDQ3G

Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
124A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
4.8nF @ 25V
Power - Max
379W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive V
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
R
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
G(int)
T
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. A built-in gate resistor ensures
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 3mA, T
GE
GE
C
C
= 0V, I
= 75A, T
= 75A, T
= 0V, T
= 0V, T
j
C
= 25°C)
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
1200
MIN
5.0
1.4
APT75GN120JDQ3
225A @ 1200V
-55 to 150
APT75GN120JDQ3
1200
TYP
±30
124
225
379
300
5.8
1.7
2.0
57
10
APT75GN120JDQ3
ISOTOP
G
1200V
MAX
TBD
200
600
6.5
2.1
®
"UL Recognized"
file # E145592
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT75GN120JDQ3G Summary of contents

Page 1

TYPICAL PERFORMANCE CURVES Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V GE 140 T = -55°C J 120 T = 25°C J 100 T = 125° 0.5 1.0 1.5 2.0 2.5 3 COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, ...

Page 4

V = 15V 800V 25°C or =125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, ...

Page 5

TYPICAL PERFORMANCE CURVES 6,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0. 0.9 0.30 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0. ...

Page 6

APT60DQ120 D.U.T. Figure 21, Inductive Switching Test Circuit 90% Gate Voltage t d(off) Collector Voltage 90 10% Collector Current 0 Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t ...

Page 7

TYPICAL PERFORMANCE CURVES ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS Symbol Characteristic / Test Conditions I (AV) Maximum Average Forward Current ( (RMS) RMS Forward Current (Square wave, 50% duty) F Non-Repetitive Forward Surge Current (T I FSM ...

Page 8

T = 175°C J 120 100 T = 125° -55° ANODE-TO-CATHODE VOLTAGE (V) F Figure 26. Forward Current vs. ...

Page 9

TYPICAL PERFORMANCE CURVES +18V Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery ...

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