APT75GN120JDQ3G Microsemi Power Products Group, APT75GN120JDQ3G Datasheet - Page 8

• Manufacturer Part Number: APT75GN120JDQ3G
• Description: IGBT 1200V 124A 379W SOT227
• Manufacturer: Microsemi Power Products Group

Specifications of APT75GN120JDQ3G

• Igbt Type: Field Stop and Trench
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 75A
• Current - Collector (ic) (max): 124A
• Current - Collector Cutoff (max): 200µA
• Input Capacitance (cies) @ Vce: 4.8nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 28. Reverse Recovery Charge vs. Current Rate of Change
Figure 30. Dynamic Parameters vs. Junction Temperature
7000
6000
5000
4000
3000
2000
1000
200
180
160
140
120
100
350
300
250
200
150
100
Figure 32. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
50
0
Figure 26. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
I
V
V
RRM
J
F
R
F
T
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
t
= 800V
, ANODE-TO-CATHODE VOLTAGE (V)
rr
J
200
, JUNCTION TEMPERATURE (°C)
25
120A
V
T
T
R
J
J
1
, REVERSE VOLTAGE (V)
= 125°C
= 175°C
400
50
Q
rr
10
600
75
2
30A
800
100
T
T
J
J
3
= -55°C
t
rr
= 25°C
Q
1000
125
rr
100 200
60A
1200
150
4
Figure 27. Reverse Recovery Time vs. Current Rate of Change
Figure 31. Maximum Average Forward Current vs. CaseTemperature
Figure 29. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
50
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
0
5
0
0
0
0
25
-di
-di
F
T
F
V
/dt, CURRENT RATE OF CHANGE(A/µs)
J
R
/dt, CURRENT RATE OF CHANGE (A/µs)
= 125°C
200
= 800V
200
50
Case Temperature (°C)
400
400
75
30A
120A
600
600
100
60A
120A
60A
800
800
125
Duty cycle = 0.5
T
1000
1000
J
T
150
V
J
= 175°C
R
= 125°C
= 800V
30A
1200
1200
175