APT75GN120JDQ3G Microsemi Power Products Group, APT75GN120JDQ3G Datasheet - Page 5
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APT75GN120JDQ3G
Manufacturer Part Number
APT75GN120JDQ3G
Description
IGBT 1200V 124A 379W SOT227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT75GN120JDQ3G.pdf
(9 pages)
Specifications of APT75GN120JDQ3G
Igbt Type
Field Stop and Trench
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 75A
Current - Collector (ic) (max)
124A
Current - Collector Cutoff (max)
200µA
Input Capacitance (cies) @ Vce
4.8nF @ 25V
Power - Max
379W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
ISOTOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
6,000
1,000
Junction
temp. (°C)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
CE
0
10
(watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.05
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
10
-4
0.0820
0.214
0.0335
30
40
RECTANGULAR PULSE DURATION (SECONDS)
C
10
C
C
0.00977
0.227
6.33
ies
oes
res
-3
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
40
10
5
1
10 20 30 40 50 60 70 80 90 100 110 120
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 1.0Ω
250
200
150
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
50
0
°
I
°
C
C
0
C
V
, COLLECTOR CURRENT (A)
10
CE
200
-1
, COLLECTOR TO EMITTER VOLTAGE
400
Note:
Peak T J = P DM x Z θJC + T C
600
Duty Factor D =
1.0
t 1
800 1000 1200 1400
t 2
t 1
APT75GN120JDQ3
/
t 2
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f