APT50M85JVR Microsemi Power Products Group, APT50M85JVR Datasheet
APT50M85JVR
Manufacturer Part Number
APT50M85JVR
Description
MOSFET N-CH 500V 50A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet
1.APT50M85JVR.pdf
(4 pages)
Specifications of APT50M85JVR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
535nC @ 10V
Input Capacitance (ciss) @ Vds
10800pF @ 25V
Power - Max
500W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT50M85JVR
Manufacturer:
MSC
Quantity:
2 000
Company:
Part Number:
APT50M85JVR
Manufacturer:
APT
Quantity:
25
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
I
E
E
D(on)
DS(on)
GS(th)
I
,T
I
DSS
GSS
GSM
P
T
DSS
DM
I
AR
GS
AR
AS
D
DSS
D
STG
L
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
On State Drain Current
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
(Repetitive and Non-Repetitive)
1
2
(V
Microsemi Website - http://www.microsemi.com
DS
C
DS
1
= V
C
= 25°C
• 100% Avalanche Tested
• Popular SOT-227 Package
= 25°C
> I
4
GS
GS
D(on)
2
DS
DS
, I
= ±30V, V
GS
D
(V
= V
= 0.8 V
x R
= 0V, I
= 1mA)
GS
DSS
DS(on)
= 10V, 0.5 I
, V
DSS
D
DS
= 250µA)
GS
Max, V
= 0V)
®
, V
= 0V)
GS
D[Cont.]
= 0V, T
GS
All Ratings: T
= 10V)
)
C
= 125°C)
500V 50A 0.085Ω Ω Ω Ω Ω
APT50M85JVR
C
®
= 25°C unless otherwise specified.
500
MIN
50
2
APT50M85JVR
ISOTOP
-55 to 150
1300
TYP
500
200
±30
±40
500
300
G
50
30
30
4
fi
0.085
±100
MAX
500
50
"UL Recongnized"
file # 145592
4
D
S
Ohms
Amps
Watts
Amps
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
µA
nA
°C
Related parts for APT50M85JVR
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
IGBT 600V 100A 463W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
IGBT 600V 198A 833W TO264
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
IGBT 600V 41A 187W TO247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 600V 23A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 17A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 1200V 3.5A TO-220
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 22A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 100V 75A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 56A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 27A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 59A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 500V 26A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 300V 40A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
Part Number:
Description:
MOSFET N-CH 200V 65A TO-247
Manufacturer:
Microsemi Power Products Group
Datasheet:
APT50M85JVR Summary of contents
Page 1
... I = 1mA Microsemi Website - http://www.microsemi.com APT50M85JVR 500V 50A 0.085Ω Ω Ω Ω Ω ® "UL Recongnized" file # 145592 fi ISOTOP G = 25°C unless otherwise specified. C APT50M85JVR 500 50 200 ±30 ±40 500 4 -55 to 150 300 30 30 1300 MIN TYP MAX ...
Page 2
... D[Cont /dt = 100A/µs) S D[Cont /dt = 100A/µs) S D[Cont See MIL-STD-750 Method 3471 4 Starting T = +25° 2.89mH RECTANGULAR PULSE DURATION (SECONDS) APT50M85JVR MIN TYP MAX 9000 10800 1240 1740 500 750 390 535 42 65 DSS @ 25°C 170 255 DSS MIN TYP MAX ...
Page 3
... FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE APT50M85JVR V GS =15V V GS =10V V GS =7V 6V 5. DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS NORMALIZED 10V @ 0.5 I [Cont =10V ...
Page 4
... H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) * Source * Source Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 APT50M85JVR C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150° =+25° ...