APT50M85JVR Microsemi Power Products Group, APT50M85JVR Datasheet - Page 3

• Manufacturer Part Number: APT50M85JVR
• Description: MOSFET N-CH 500V 50A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M85JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 535nC @ 10V
• Input Capacitance (ciss) @ Vds: 10800pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
150
120
150
120
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
2.5
2.0
1.5
1.0
0.5
0.0
90
60
30
90
60
30
50
40
30
20
10
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
0
0
0
-50
25
V
0
0
V
DS
GS
V DS > I D (ON) x R DS (ON)MAX.
I
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 0.5 I
, GATE-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
-25
T
250µSEC. PULSE TEST
V
GS
J
T
, JUNCTION TEMPERATURE (°C)
V GS =7V, 10V & 15V
50
50
C
= 10V
D
, CASE TEMPERATURE (°C)
[Cont.]
2
T J = +125°C
0
T J = +25°C
100
25
75
T J = +125°C
T J = +25°C
T J = -55°C
50
4
100
150
75
4.5V
5.5V
T J = -55°C
100 125 150
5V
4V
6V
6
200
125
150
250
8
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
1.10
1.05
1.00
0.95
0.90
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
150
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.2
1.1
1.0
0.9
0.8
0.7
0.6
90
60
30
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
0
-50
-50
0
V
0
DS
FIGURE 5, R
V
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
I
= 10V @ 0.5 I
J
NORMALIZED TO
D
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
30
C
4
, CASE TEMPERATURE (°C)
V GS =10V
V GS =7V
0
0
V GS =10V
DS
25
25
D
60
(ON) vs DRAIN CURRENT
8
V GS =15V
[Cont.]
50
50
12
90
75
75 100 125 150
V GS =20V
100 125 150
120
16
5.5V
4.5V
5V
4V
6V
APT50M85JVR
150
20