APT50M85JVR Microsemi Power Products Group, APT50M85JVR Datasheet - Page 2

• Manufacturer Part Number: APT50M85JVR
• Description: MOSFET N-CH 500V 50A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT50M85JVR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 535nC @ 10V
• Input Capacitance (ciss) @ Vds: 10800pF @ 25V
• Power - Max: 500W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
θJC
θJA
oss
SD
iss
rss
S
gs
gd
r
rr
f
g
rr
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
-4
3
SINGLE PULSE
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
S
, dl
= -I
, dl
S
/dt = 100A/µs)
D[Cont.]
S
/dt = 100A/µs)
I
D
10
I
)
= 0.5 I
D
3
4
Test Conditions
-2
V
V
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
D[Cont.]
= 0.5 V
= 0.6
= 25V
= 10V
= 15V
= 0V
j
@ 25°C
= +25°C, L = 2.89mH, R
Ω
@ 25°C
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
G
t 1
= 25Ω, Peak I
t 2
9000
1240
TYP
690
TYP
TYP
500
390
170
18
42
15
17
52
7
t 1
/ t 2
10800
APT50M85JVR
1740
MAX
0.25
MAX
MAX
750
535
255
200
L
1.3
40
13
50
65
30
34
80
14
= 30A
10
Amps
°C/W
UNIT
UNIT
Volts
UNIT
Volts
lb•in
nC
µC
pF
ns
ns