FSBB30CH60F Fairchild Semiconductor, FSBB30CH60F Datasheet - Page 6

• Manufacturer Part Number: FSBB30CH60F
• Description: IC SMART PWR MODULE SPM27-EA
• Manufacturer: Fairchild Semiconductor
• Series: SPM™r
• Type: IGBTr

Specifications of FSBB30CH60F

• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: SPM27EA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FSBB30CH60F Rev. D
Electrical Characteristics
Inverter Part
Note:
3. t
HS
LS
For the detailed information, please see Figure 4.
ON
Symbol
V
and t
CE(SAT)
V
t
t
OFF
t
t
F
C(OFF)
C(OFF)
C(ON)
C(ON)
t
t
I
t
t
OFF
OFF
CES
ON
ON
t
t
rr
rr
include the propagation delay time of the internal drive IC. t
Collector - Emitter
Saturation Voltage
FWD Forward Voltage
Switching Times
Collector-Emitter
Leakage Current
V
IN(ON)
Parameter
V
IN
t
ON
V
10% I
(a) turn-on
CE
t
100% I
rr
C
(T
90% I
Figure 4. Switching Time Definition
J
t
C
C(ON)
= 25°C, Unless Otherwise Specified)
100% I
C
10% V
V
V
V
V
I
V
(Note 3)
V
I
V
(Note 3)
V
C
C
CC
IN
IN
PN
IN
PN
IN
CE
= 30A
= 30A
C
= 5V
= 0V
= 0V ↔ 5V, Inductive Load
= 0V ↔ 5V, Inductive Load
= 300V, V
= 300V, V
= V
= V
CE
I
C
C(ON)
BS
CES
= 15V
and t
CC
CC
Conditions
C(OFF)
6
= V
= V
BS
BS
are the switching time of IGBT itself under the given gate driving condition internally.
V
= 15V
= 15V
IN(OFF)
I
I
C
C
=30A, T
=30A, T
V
t
IN
OFF
J
J
= 25°C
= 25°C
I
10% V
(b) turn-off
C
CE
t
Min.
C(OFF)
-
-
-
-
-
-
-
-
-
-
-
-
-
10% I
V
CE
Typ.
0.49
0.34
0.86
0.52
0.10
0.68
0.47
0.90
0.50
0.10
C
-
-
-
Max.
2.75
250
2.4
-
-
-
-
-
-
-
-
-
-
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Units
µA
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
V