FDG6301N_F085 Fairchild Semiconductor, FDG6301N_F085 Datasheet
FDG6301N_F085
Specifications of FDG6301N_F085
Related parts for FDG6301N_F085
FDG6301N_F085 Summary of contents
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... Electrostatic Discharge Rating MIL-STD-883D Human Body Model(100 pF / 1500 ) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation FDG6301N_F085 Rev. A Features 25 V, 0.22 A continuous, 0.65 A peak. Very low level gate drive requirements allowing direct operation circuits (V Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ...
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... design while R is determined by the user's board design Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6301N_F085 Rev unless otherwise noted ) A ...
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... T , JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature. 0 -55° 0.15 0.1 0.05 0 0 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDG6301N_F085 Rev 100 125 150 25°C 125°C 0.0001 2 4 2.5V GS 2.7V 4 3.0V 3.5 3. ...
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... DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.5 0.5 0.2 0.2 0.1 0.1 0.05 0.05 0.02 0.02 0.01 Single Pulse 0.01 0.005 0.002 0.0001 0.001 Figure 11. Transient Thermal Response Curve. FDG6301N_F085 Rev continued) 30 10V 0.1 0.4 0.5 0.6 Figure 8. Capacitance Characteristics . 0.0001 10 ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDG6301N_F085 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...