FDG6301N_F085 Fairchild Semiconductor, FDG6301N_F085 Datasheet - Page 2

• Manufacturer Part Number: FDG6301N_F085
• Description: MOSET N-CH DUAL DGTL FET SC70-6
• Manufacturer: Fairchild Semiconductor

Specifications of FDG6301N_F085

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 9.5pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDG6301N_F085 Rev. A
Electrical Characteristics
Symbol
OFF CHARACTERISTICS
BV
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
Notes:
1. R
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
DSS
GSS
D(ON)
D(on)
r
D(off)
f
S
FS
BV
GS(th)
V
DS(ON)
iss
oss
rss
SD
g
gs
gd
DSS
GS(th)
by design while R
DSS
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
/ T
/ T
J
J
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage Current
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Source Current
Drain-Source Diode Forward Voltage
CA
is determined by the user's board design. R
(Note 2)
(Note 2)
(T
A
JA
= 25
= 415
O
C/W on minimum pad mounting on FR-4 board in still air.
O
C unless otherwise noted )
Conditions
V
I
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 0 V, I
= 20 V, V
= 8 V, V
= V
= 4.5 V, I
= 2.7 V, I
= 4.5 V, V
= 5 V, I
= 10 V, V
= 5 V, I
= 4.5 V, R
= 5 V, I
= 4.5 V
= 0 V, I
GS
, I
2
D
D
D
D
D
S
= 0.22 A
DS
= 250 µA
= 0.25 A
= 0.22 A,
= 250 µA
D
D
GS
GS
= 0.5 A,
DS
GEN
= 0 V
= 0.22 A
= 0.19 A
= 0 V
= 0 V,
= 5 V
= 50
(Note 2)
T
T
J
J
= 55°C
=125°C
o
o
C
C
0.65
0.22
Min
25
0.85
0.29
0.12
0.03
Typ
-2.1
2.6
5.3
3.7
0.2
9.5
1.3
4.5
3.2
0.8
25
6
5
4
www.fairchildsemi.com
Max
0.25
100
1.5
0.4
1.2
10
10
10
1
4
7
5
8
7
JC
is guaranteed
mV /
mV /
Units
µA
µA
nC
nC
nC
nA
ns
ns
ns
ns
V
V
A
S
pF
pF
pF
A
V
o
o
C
C