FDME1034CZT Fairchild Semiconductor, FDME1034CZT Datasheet - Page 7
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FDME1034CZT
Manufacturer Part Number
FDME1034CZT
Description
MOSFET N/P-CH 20V 6-MICROFET
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDME1034CZT.pdf
(11 pages)
Specifications of FDME1034CZT
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
66 mOhm @ 3.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3.8A, 2.6A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
4.2nC @ 4.5V
Input Capacitance (ciss) @ Vds
300pF @ 10V
Power - Max
600mW
Mounting Type
Surface Mount
Package / Case
6-MLP, 6-MicroFET™
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
55 mOhms, 95 mOhms
Drain-source Breakdown Voltage
20 V, - 20 V
Continuous Drain Current
3.4 A, - 2.3 A
Power Dissipation
1.3 W
Maximum Operating Temperature
+ 150 C
Forward Transconductance Gfs (max / Min)
9 S, 7 S
Gate Charge Qg
3 nC, 5.5 nC
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Module Configuration
Dual
Continuous Drain Current Id
3.8A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.055ohm
Rds(on) Test Voltage Vgs
4.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDME1034CZT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDME1034CZT Rev.C1
©2010 Fairchild Semiconductor Corporation
Typical Characteristics (Q2 P-Channel)
1.6
1.4
1.2
1.0
0.8
0.6
6
4
2
0
Figure 13. On- Region Characteristics
6
4
2
0
0.0
0
Figure 15. Normalized On-Resistance
-75
Figure 17. Transfer Characteristics
V
V
GS
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
V
I
-50
= -3 V
= -4.5 V
D
GS
V
= -2.3 A
vs Junction Temperature
DS
= -4.5 V
-V
-V
0.5
-25
= -5 V
V
T
DS
0.5
GS
GS
J
,
,
, GATE TO SOURCE VOLTAGE (V)
JUNCTION TEMPERATURE (
DRAIN TO SOURCE VOLTAGE (V)
= -1.5 V
0
T
J
= 25
V
V
GS
GS
25
T
1.0
μ
J
1.0
= - 1.8 V
o
s
= -2.5 V
= 150
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
o
C
75
T
1.5
1.5
J
= -55
100 125 150
o
C )
o
C
μ
s
2.0
2.0
T
J
7
= 25 °C unless otherwise noted
Figure 14. Normalized on-Resistance vs Drain
0.001
0.01
500
400
300
200
100
0.1
10
1
0
Figure 16. On-Resistance vs Gate to
3
2
1
0
0.0
1.0
Forward Voltage vs Source Current
0
Figure 18. Source to Drain Diode
V
V
GS
Current and Gate Voltage
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
-V
1.5
= 0 V
0.2
SD
= -1.5 V
T
-V
J
, BODY DIODE FORWARD VOLTAGE (V)
= 150
GS
Source Voltage
-I
D
2.0
,
,
GATE TO SOURCE VOLTAGE (V)
DRAIN CURRENT (A)
0.4
o
V
C
2
GS
= -1.8 V
2.5
V
GS
0.6
T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
T
= -2.5 V
J
J
μ
= 25
= 125
s
T
3.0
J
= -55
o
T
C
I
o
D
0.8
C
J
= -2.3 A
4
= 25
V
o
3.5
C
GS
= -3 V
o
www.fairchildsemi.com
V
C
GS
1.0
4.0
= -4.5 V
μ
s
4.5
1.2
6