FDG410NZ Fairchild Semiconductor, FDG410NZ Datasheet - Page 5

• Manufacturer Part Number: FDG410NZ
• Description: MOSFET N-CH SINGLE 20V SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG410NZ

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 70 mOhm @ 2.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 7.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 535pF @ 10V
• Power - Max: 380mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDG410NZ Rev.B
Typical Characteristics
0.001
0.01
0.1
2
1
10
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
10
-3
T
J
= 25 °C unless otherwise noted
10
SINGLE PULSE
R
-2
θ
JA
= 333
t, RECTANGULAR PULSE DURATION (sec)
o
C/W
10
-1
5
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
J
= P
DM
x Z
P
θJA
DM
1
/t
x R
2
θJA
100
t
1
+ T
t
2
A
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