FDMC7660 Fairchild Semiconductor, FDMC7660 Datasheet - Page 4

• Manufacturer Part Number: FDMC7660
• Description: MOSFET N-CH 30V 20A 8-PQFN
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC7660

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.2 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 86nC @ 10V
• Input Capacitance (ciss) @ Vds: 4830pF @ 15V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDMC7660 Rev.C1
Typical Characteristics
0.01
300
100
30
10
0.1
10
10
1
Figure 7.
0.01
8
6
4
2
0
1
0.01
0
I
Figure 9.
THIS AREA IS
LIMITED BY r DS
SINGLE PULSE
T
R
T
D
Figure 11. Forward Bias Safe
J
A
T
= 20 A
JA
= MAX RATED
= 25
= 125
Switching Capability
o
V
0.1
C
Gate Charge Characteristics
DS
t
0.1
AV
o
C/W
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
Unclamped Inductive
, TIME IN AVALANCHE (ms)
Q
(
V
g
on
20
, GATE CHARGE (nC)
DD
)
= 10 V
V
DD
1
T
1
J
= 20 V
= 125
V
DD
T
T
J
o
J
= 15 V
C
= 25°C unless otherwise noted
= 25
10
40
10
o
C
T
J
= 100
DC
100 ms
10s
10 ms
1s
1 ms
100 300
o
C
100200
60
4
150
100
10
10
0.5
0.05
10
50
0.1
1
Figure 10.
10
0
3
2
10
25
1
0.1
Figure 12.
-3
Figure 8.
R
Current vs Case Temperature
f = 1 MHz
V
V
T
GS
GS
JC
10
= 4.5 V
= 0 V
= 3
50
V
-2
DS
Maximum Continuous Drain
Power Dissipation
o
to Source Voltage
C/W
T
V
t, PULSE WIDTH (sec)
, DRAIN TO SOURCE VOLTAGE (V)
C
GS
Single Pulse Maximum
Capacitance vs Drain
,
CASE TEMPERATURE (
10
= 10 V
-1
75
1
1
100
SINGLE PULSE
R
T
A
T
JA
10
= 25
= 125
o
C )
o
C
125
o
www.fairchildsemi.com
C
10
100
C
C/W
C
oss
rss
iss
1000
150
30