FDS4435BZ_F085 Fairchild Semiconductor, FDS4435BZ_F085 Datasheet - Page 2

• Manufacturer Part Number: FDS4435BZ_F085
• Description: MOSFET P-CH 30V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4435BZ_F085

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 8.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1845pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 26 mOhms
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 8.8 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
NOTES:
1. R
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T
BV
'BV
I
I
V
r
g
C
C
C
R
t
t
t
t
Q
Q
Q
Q
V
t
Q
'V
DSS
GSS
d(on)
r
d(off)
f
rr
DS(on)
FS
GS(th)
SD
the user's board design.
iss
oss
rss
g
'T
'T
g
g
gs
gd
rr
Symbol
TJA
DSS
GS(th)
DSS
J
J
is determined with the device mounted on a 1in
J
= 25°C, L = 1mH, I
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
= -7A, V
a. 50°C/W when mounted on
a 1 in
Parameter
DD
2
pad of 2 oz copper.
= -30V, V
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
J
GS
= 25°C unless otherwise noted
= -10V
V
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DD
GS
GS
GS
GS
GS
GS
GS
DS
DS
GS
DS
GS
= -8.8A, di/dt = 100A/Ps
= -250PA, referenced to 25°C
= -250PA, V
= -250PA, referenced to 25°C
= 0V to -10V
= 0V to -5V
= -15V, V
= -15V, I
= -10V, R
= -5V, I
= 0V, I
= -24V, V
= V
= -10V, I
= -4.5V, I
= -10V, I
= ±25V, V
2
DS
Test Conditions
, I
S
D
D
= -8.8A
D
D
D
GS
GEN
= -8.8A
GS
= -8.8A,
DS
D
= -250PA
GS
= -8.8A, T
= -8.8A
= -6.7A
= 0V,
= 0V
= 0V
= 6:
= 0V
V
I
D
DD
= -8.8A
(Note 2)
= -15V,
J
= 125°C
b. 125°C/W when mounted on
TJC
a minimum pad of 2 oz copper.
is guaranteed by design while R
Min
-30
-1
1385
-0.9
Typ
-2.1
-21
275
230
5.2
7.4
4.5
29
23
16
26
22
24
10
30
12
28
16
6
6
1845
Max
-1.2
±10
365
345
20
35
28
20
12
48
22
40
23
44
35
TCA
-3
www.fairchildsemi.com
1
is determined by
mV/°C
mV/°C
Units
m:
PA
PA
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
:
V
S
V