FDS4435BZ_F085 Fairchild Semiconductor, FDS4435BZ_F085 Datasheet - Page 5
![MOSFET P-CH 30V 8-SOIC](/photos/18/29/182904/8-soic_sml.jpg)
FDS4435BZ_F085
Manufacturer Part Number
FDS4435BZ_F085
Description
MOSFET P-CH 30V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4435BZ_F085.pdf
(6 pages)
Specifications of FDS4435BZ_F085
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
1845pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
26 mOhms
Forward Transconductance Gfs (max / Min)
24 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 8.8 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Corporation
FDS4435BZ_F085 Rev.A
Typical Characteristics
1000
0.001
100
0.01
0.5
10
0.1
10
1
2
1
10
-4
-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
10
-3
-3
Figure 13. Single Pulse Maximum Power Dissipation
T
Figure 14. Transient Thermal Response Curve
J
= 25°C unless otherwise noted
10
10
-2
-2
SINGLE PULSE
R
T
JA
= 125
t, RECTANGULAR PULSE DURATION (sec)
t, PULSE WIDTH (s)
o
C/W
10
10
-1
-1
5
1
1
NOTES:
DUTY FACTOR: D = t
PEAK T
10
V
10
GS
= -10 V
J
= P
DM
x Z
P
TJA
DM
100
SINGLE PULSE
R
T
1
/t
100
x R
A
T
2
JA
= 25
TJA
= 125
t
1
+ T
o
C
t
2
A
o
www.fairchildsemi.com
C/W
1000
1000