FDMC86102 Fairchild Semiconductor, FDMC86102 Datasheet - Page 3
![MOSFET N-CH 100V 8-MLP](/photos/38/0/380049/power33_8_sml.jpg)
FDMC86102
Manufacturer Part Number
FDMC86102
Description
MOSFET N-CH 100V 8-MLP
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDMC86102.pdf
(7 pages)
Specifications of FDMC86102
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
965pF @ 50V
Power - Max
2.3W
Mounting Type
Surface Mount
Package / Case
8-MLP, Power33
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
32.8 mOhms
Forward Transconductance Gfs (max / Min)
19 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
41 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDMC86102
Manufacturer:
IR
Quantity:
21 000
Part Number:
FDMC86102
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDMC86102L
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
FDMC86102LZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDMC86102 Rev.C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
Figure 3. Normalized On- Resistance
30
25
20
15
10
Figure 1.
5
0
5
0
0.0
-75
Figure 5. Transfer Characteristics
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 7 A
vs Junction Temperature
= 5 V
= 10 V
0.5
V
T
V
3
-25
On-Region Characteristics
J
DS
GS
,
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
V
1.0
V
0
= 150
GS
GS
= 10 V
= 6 V
4
25
o
µ
C
s
1.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
T
5
= 25 °C unless otherwise noted
J
2.0
= -55
75
T
J
V
V
= 25
V
GS
GS
o
GS
o
100 125 150
C
C )
= 4.5 V
= 5.5 V
= 5 V
o
6
2.5
C
µ
s
3.0
7
3
0.001
0.01
0.1
80
70
60
50
40
30
20
10
60
10
1
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0 V
V
0.2
SD
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 4.5 V
5
5
T
, BODY DIODE FORWARD VOLTAGE (V)
J
V
Normalized On-Resistance
On-Resistance vs Gate to
= 150
GS
Source Voltage
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
I
I
D
0.4
D
o
10
,
6
C
= 7 A
DRAIN CURRENT (A)
V
GS
T
= 5 V
J
= 125
0.6
15
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
o
T
s
C
J
= 25
0.8
20
8
V
T
o
GS
C
J
T
= -55
J
= 5.5 V
= 25
www.fairchildsemi.com
V
V
1.0
25
GS
GS
9
o
C
o
= 10 V
C
= 6 V
µ
s
1.2
30
10