FDMC86102 Fairchild Semiconductor, FDMC86102 Datasheet - Page 3

• Manufacturer Part Number: FDMC86102
• Description: MOSFET N-CH 100V 8-MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMC86102

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 24 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 965pF @ 50V
• Power - Max: 2.3W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, Power33
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 32.8 mOhms
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDMC86102 Rev.C
Typical Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
Figure 3. Normalized On- Resistance
30
25
20
15
10
Figure 1.
5
0
5
0
0.0
-75
Figure 5. Transfer Characteristics
2
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
I
V
D
DS
GS
-50
= 7 A
vs Junction Temperature
= 5 V
= 10 V
0.5
V
T
V
3
-25
On-Region Characteristics
J
DS
GS
,
JUNCTION TEMPERATURE (
,
, GATE TO SOURCE VOLTAGE (V)
DRAIN TO SOURCE VOLTAGE (V)
T
J
V
1.0
V
0
= 150
GS
GS
= 10 V
= 6 V
4
25
o
µ
C
s
1.5
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
50
T
J
T
5
= 25 °C unless otherwise noted
J
2.0
= -55
75
T
J
V
V
= 25
V
GS
GS
o
GS
o
100 125 150
C
C )
= 4.5 V
= 5.5 V
= 5 V
o
6
2.5
C
µ
s
3.0
7
3
0.001
0.01
0.1
80
70
60
50
40
30
20
10
60
10
1
5
4
3
2
1
0
Figure 2.
Figure 4.
0.0
Forward Voltage vs Source Current
0
4
vs Drain Current and Gate Voltage
Figure 6.
V
GS
V
GS
= 0 V
V
0.2
SD
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
= 4.5 V
5
5
T
, BODY DIODE FORWARD VOLTAGE (V)
J
V
Normalized On-Resistance
On-Resistance vs Gate to
= 150
GS
Source Voltage
Source to Drain Diode
,
GATE TO SOURCE VOLTAGE (V)
I
I
D
0.4
D
o
10
,
6
C
= 7 A
DRAIN CURRENT (A)
V
GS
T
= 5 V
J
= 125
0.6
15
7
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
µ
o
T
s
C
J
= 25
0.8
20
8
V
T
o
GS
C
J
T
= -55
J
= 5.5 V
= 25
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V
V
1.0
25
GS
GS
9
o
C
o
= 10 V
C
= 6 V
µ
s
1.2
30
10