FCPF16N60NT Fairchild Semiconductor, FCPF16N60NT Datasheet - Page 2

• Manufacturer Part Number: FCPF16N60NT
• Description: MOSFET N-CH 600V TO-220-3
• Manufacturer: Fairchild Semiconductor
• Series: SupreMOS™r

Specifications of FCPF16N60NT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 199 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 52.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 2170pF @ 100V
• Power - Max: 35.7W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 134.4 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 170mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2V
• Power Dissipation Pd: 1.08W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCP16N60N / FCPF16N60NT Rev. A1
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. I
3. I
4. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
d(on)
d(off)
f
DSS
GSS
r
S
SM
rr
BV
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
AS
SD
g(tot)
gs
gd
rr
T
Device Marking
Symbol
DSS
FCPF16N60NT
= 5.3A, R
J
DSS
eff.
FCP16N60N
16A, di/dt
G
= 25 , Starting T
200A/ s, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 380V, Starting T
J
FCPF16N60NT
= 25 C
FCP16N60N
Device
Parameter
J
= 25 C
T
C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
Drain Open
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 1mA, V
= 1mA, Referenced to 25
/dt = 100A/ s
= 4.7
= 480V, V
= 480V, V
= 0V, I
= ±30V, V
= 40V, I
= 0V, I
= V
= 10V, I
= 100V, V
= 380V, V
= 0V to 480V, V
= 380V, I
= 10V
= 380V, I
DS
Test Conditions
, I
2
SD
SD
GS
Reel Size
D
D
D
D
D
= 8A
= 8A
= 8A
GS
GS
DS
= 250 A
= 8A
GS
GS
= 0V, T
= 8A
= 8A,
-
-
= 0V
= 0V, T
= 0V
= 0V
= 0V, f = 1MHz
GS
C
= 0V
= 25
C
= 125
o
C
o
C
(Note 4)
(Note 4)
o
Tape Width
C
-
-
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.170
1630
Typ.
40.2
12.9
15.8
15.5
60.3
20.2
0.73
319
176
4.4
6.7
2.9
70
40
13
5
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
130.6
Max.
0.199
±100
2170
41.6
41.0
50.4
52.3
100
4.0
1.2
10
95
10
60
16
48
50
50
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
nA
pF
pF
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
o
A
C
C