FCH35N60 Fairchild Semiconductor, FCH35N60 Datasheet - Page 2

• Manufacturer Part Number: FCH35N60
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: Fairchild Semiconductor
• Series: SuperMOS™r

Specifications of FCH35N60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 98 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 181nC @ 10V
• Input Capacitance (ciss) @ Vds: 6640pF @ 25V
• Power - Max: 312.5W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 79 mOhms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 312.5 W
• Forward Transconductance Gfs (max / Min): 28.8 S
• Gate Charge Qg: 139 nC
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FCH35N60 Rev. A1
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: I
3: I
4: Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
ΔBV
/
BV
I
I
V
R
g
C
C
C
C
C
Q
Q
Q
ESR
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
oss
oss
g
gs
gd
rr
AS
SD
Device Marking
DSS
DS
Symbol
ΔT
= 17.5A, V
DSS
≤ 35A, di/dt ≤ 200A/μs, V
eff.
FCH35N60
J
DD
= 50V, R
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
G
= 25Ω, Starting T
DD
≤ BV
FCH35N60
DSS
Device
Parameter
, Starting T
J
= 25°C
J
= 25°C
Package
TO-247
I
I
I
V
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
V
Drain Open, F= 1MHZ
V
R
D
D
D
GS
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
DS
DS
GS
G
F
= 250μA, V
= 250μA, V
= 250μA, Referenced to 25
/dt = 100A/μs
= 4.7Ω
= 600V, V
= 480V, T
= 0V, I
= 0V, I
= ±30V, V
= 40V, I
= 25V, V
= 480V, V
= 0V to 480V, V
= 480V, I
= 300V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
D
SD
D
Reel Size
D
= 25
D
= 16A
GS
GS
GS
D
D
= 35A
= 17.5A
= 35A
GS
C
= 17.5A
DS
= 250μA
GS
= 35A
= 35A
= 125
= 0V
= 0V, T
= 0V, T
o
-
= 0V
= 0V
= 0V, f = 1.0MHz
C unless otherwise noted
GS
o
C
= 0V
J
J
= 25
= 150
o
(Note 4)
(Note 4)
o
C
C
o
C
Tape Width
-
Min.
600
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.079
4990
2380
Typ.
16.3
28.8
120
105
614
650
700
140
113
340
139
0.6
1.4
34
73
31
69
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
0.098
±100
6640
3170
250
220
155
181
105
1.4
5.0
78
10
35
1
30
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
μA
pF
pF
pF
pF
pF
nA
ns
ns
ns
ns
ns
μC
Ω
V
V
V
Ω
A
A
V
V
S
o
C