IPP60R750E6 Infineon Technologies, IPP60R750E6 Datasheet - Page 17
![MOSFET N-CH 600V 5.7A TO220](/photos/16/8/160866/to220_sml.jpg)
IPP60R750E6
Manufacturer Part Number
IPP60R750E6
Description
MOSFET N-CH 600V 5.7A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPP60R750E6.pdf
(17 pages)
Specifications of IPP60R750E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
750 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3.5V @ 170µA
Gate Charge (qg) @ Vgs
17.2nC @ 10V
Input Capacitance (ciss) @ Vds
373pF @ 100V
Power - Max
48W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.68 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
5.7 A
Power Dissipation
48 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R750E6
Manufacturer:
INFINEON
Quantity:
12 500
component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered