IPD65R600E6 Infineon Technologies

MOSFET N-CH 600V 7.3A TO252

IPD65R600E6

Manufacturer Part Number

IPD65R600E6

Description

MOSFET N-CH 600V 7.3A TO252

Manufacturer

Infineon Technologies

Series

CoolMOS™r

Specifications of IPD65R600E6

Package / Case

*

Mounting Type

*

Power - Max

63W

Fet Type

MOSFET N-Channel, Metal Oxide

Gate Charge (qg) @ Vgs

23nC @ 10V

Vgs(th) (max) @ Id

3.5V @ 210µA

Current - Continuous Drain (id) @ 25° C

7.3A

Drain To Source Voltage (vdss)

650V

Fet Feature

Standard

Rds On (max) @ Id, Vgs

600 mOhm @ 2.1A, 10V

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.54 Ohms

Drain-source Breakdown Voltage

700 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

7.3 A

Power Dissipation

63 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPD65R600E6

Manufacturer:

Infineon

Quantity:

2 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IPD65R600E6

Manufacturer:

INFINEON

Quantity:

30 000

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IPD65R600E6

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IPD65R600E6

Quantity:

12 800

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