IPP60R600E6 Infineon Technologies, IPP60R600E6 Datasheet - Page 10
![MOSFET N-CH 600V 7.3A TO220](/photos/16/8/160866/to220_sml.jpg)
IPP60R600E6
Manufacturer Part Number
IPP60R600E6
Description
MOSFET N-CH 600V 7.3A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPP60R600E6.pdf
(17 pages)
Specifications of IPP60R600E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.4A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
3.5V @ 200µA
Gate Charge (qg) @ Vgs
20.5nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 100V
Power - Max
63W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
63 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220
Rds(on) @ Tj=25°c Vgs=10
600.0 mOhm
Id(max) @ Tc=25°c
7.3 A
Idpuls (max)
19.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R600E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPP60R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
FinalData Sheet
Table 14
Table 15
I
Typ. output characteristics
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
T
C
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
600V CoolMOS™ E6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=2.4 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.0, 2010-04-12
GS
IPx60R600E6