IPA65R600E6 Infineon Technologies, IPA65R600E6 Datasheet
IPA65R600E6
Manufacturer Part Number
IPA65R600E6
Description
MOSFET N-CH 650V 7.3A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA65R600E6.pdf
(17 pages)
Specifications of IPA65R600E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 2.1A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
7.3A
Vgs(th) (max) @ Id
3.5V @ 210µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 100V
Power - Max
28W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.54 Ohms
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
650.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
600.0 mOhm
Id(max) @ Tc=25°c
7.3 A
Idpuls (max)
18.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA65R600E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA65R600E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
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Data Sheet may be used in life-support devices or systems and/ or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies failure of such components can reasonably ...