IPA60R520E6 Infineon Technologies, IPA60R520E6 Datasheet - Page 9
![MOSFET N-CH 600V 8.1A TO220](/photos/16/8/160876/to-220fullpak_sml.jpg)
IPA60R520E6
Manufacturer Part Number
IPA60R520E6
Description
MOSFET N-CH 600V 8.1A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R520E6.pdf
(16 pages)
Specifications of IPA60R520E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
520 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
8.1A
Vgs(th) (max) @ Id
3.5V @ 230µA
Gate Charge (qg) @ Vgs
23.4nC @ 10V
Input Capacitance (ciss) @ Vds
512pF @ 100V
Power - Max
29W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.47 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.1 A
Power Dissipation
29 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R520E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPA60R520E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Final Data Sheet
Table 11
Table 12
I
I
Safe operating area
TO-220
Safe operating area
TO-220
D
D
=f(V
=f(V
DS
DS
);
); T
T
C
C
=80 °C; D=0; parameter t
=25 °C; D=0; parameter t
T
T
C
C
=25 °C
=80 °C
p
p
9
Safe operating area
TO-220 FullPAK
I
Safe operating area
TO-220 FullPAK
I
D
D
=f(V
=f(V
DS
DS
600V CoolMOS™ E6 Power Transistor
);
); T
T
C
C
=25 °C; D=0; parameter t
=80 °C; D=0; parameter t
Electrical characteristics diagrams
T
T
C
C
=25 °C
=80 °C
Rev. 2.0, 2010-04-09
p
p
IPx60R520E6