IPP60R380E6 Infineon Technologies, IPP60R380E6 Datasheet - Page 13
![MOSFET N-CH 600V 10.6A TO220](/photos/16/8/160866/to220_sml.jpg)
IPP60R380E6
Manufacturer Part Number
IPP60R380E6
Description
MOSFET N-CH 600V 10.6A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPP60R380E6.pdf
(16 pages)
Specifications of IPP60R380E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 3.8A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10.6A
Vgs(th) (max) @ Id
3.5V @ 320µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 100V
Power - Max
83W
Mounting Type
*
Package / Case
*
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.34 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
10.6 A
Power Dissipation
83 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220
Rds(on) @ Tj=25°c Vgs=10
380.0 mOhm
Id(max) @ Tc=25°c
10.6 A
Idpuls (max)
30.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPP60R380E6
Manufacturer:
INFINEON
Quantity:
12 500
6
Table 19
Table 20
Table 21
FinalData Sheet
Switching times test circuit for inductive load
Unclamped inductive load test circuit
Test circuit for diode characteristics
R
G1
R
R
G2
G1
V
Test circuits
Switching times test circuit and waveform for inductive load
Unclamped inductive load test circuit and waveform
Test circuit and waveform for diode characteristics
= R
GS
I
D
I
G2
D
V
V
V
DS
DS
DS
Switching time waveform
Unclamped inductive waveform
Diode recovery waveform
13
V
V
GS
DS
V
DS
600V CoolMOS™ E6 Power Transistor
10%
90%
I
D
t
d(on)
t
on
t
r
V
t
D
d(off)
t
off
Rev. 2.0, 2010-04-09
t
f
V
(BR)DS
IPx60R380E6
Test circuits
V
DS