IPP60R190E6 Infineon Technologies, IPP60R190E6 Datasheet - Page 10

• Manufacturer Part Number: IPP60R190E6
• Description: MOSFET N-CH 600V 20.2A TO220
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPP60R190E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20.2A
• Vgs(th) (max) @ Id: 3.5V @ 630µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 100V
• Power - Max: 151W
• Mounting Type: *
• Package / Case: *
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 20.2 A
• Power Dissipation: 151 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Packages: PG-TO220-3
• Vds (max): 600.0 V
• Package: TO-220
• Rds(on) @ Tj=25°c Vgs=10: 190.0 mOhm
• Id(max) @ Tc=25°c: 20.2 A
• Idpuls (max): 59.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Final Data Sheet
Table 13
Table 14
I
Typ. output characteristics
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
T
C
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
600V CoolMOS™ E6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=9.5 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.0, 2010-05-03
GS
IPx60R190E6