IPA60R190E6 Infineon Technologies, IPA60R190E6 Datasheet - Page 10
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IPA60R190E6
Manufacturer Part Number
IPA60R190E6
Description
MOSFET N-CH 600V 20.2A TO220
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPA60R190E6.pdf
(17 pages)
Specifications of IPA60R190E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20.2A
Vgs(th) (max) @ Id
3.5V @ 630µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 100V
Power - Max
34W
Mounting Type
*
Package / Case
*
Packages
PG-TO220-3
Vds (max)
600.0 V
Package
TO-220 FullPAK
Rds(on) @ Tj=25°c Vgs=10
190.0 mOhm
Id(max) @ Tc=25°c
20.2 A
Idpuls (max)
59.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPA60R190E6
Manufacturer:
INFINEON
Quantity:
12 500
Final Data Sheet
Table 13
Table 14
I
Typ. output characteristics
Typ. drain-source on-state resistance
R
D
DS(on)
=f(V
DS
=f(I
); T
D
); T
j
=25 °C; parameter: V
j
=125 °C; parameter: V
T
C
=25 °C
GS
GS
10
Typ. output characteristics T
I
Drain-source on-state resistance
R
D
DS(on)
=f(V
DS
600V CoolMOS™ E6 Power Transistor
=f(T
); T
j
); I
j
=125 °C; parameter: V
D
=9.5 A; V
Electrical characteristics diagrams
GS
=10 V
j
=125 °C
Rev. 2.0, 2010-05-03
GS
IPx60R190E6