IPW60R280E6 Infineon Technologies, IPW60R280E6 Datasheet - Page 17

• Manufacturer Part Number: IPW60R280E6
• Description: MOSFET N-CH 600V 13.8A TO247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of IPW60R280E6

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.8A
• Vgs(th) (max) @ Id: 3.5V @ 430µA
• Gate Charge (qg) @ Vgs: 43nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 100V
• Power - Max: 104W
• Mounting Type: *
• Package / Case: *
• Packages: PG-TO247-3
• Vds (max): 600.0 V
• Package: TO-247
• Rds(on) @ Tj=25°c Vgs=10: 280.0 mOhm
• Id(max) @ Tc=25°c: 13.8 A
• Idpuls (max): 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

600V CoolMOS™ E6 Power Transistor
IPx60R280E6
Revision History
8
Revision History
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Edition 2010-04-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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Information
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described
in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications
or systems only with the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or
to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted i
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Final Data Sheet
17
Rev. 2.0, 2010-04-09