IPW65R280E6 Infineon Technologies, IPW65R280E6 Datasheet - Page 17
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IPW65R280E6
Manufacturer Part Number
IPW65R280E6
Description
MOSFET N-CH 650V 13.8A TO247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPW65R280E6.pdf
(17 pages)
Specifications of IPW65R280E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
13.8A
Vgs(th) (max) @ Id
3.5V @ 440µA
Gate Charge (qg) @ Vgs
45nC @ 10V
Input Capacitance (ciss) @ Vds
950pF @ 100V
Power - Max
104W
Mounting Type
*
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPW65R280E6
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPW65R280E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that
life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that
device or system. Life support devices or systems are intended to be implanted in the human body or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered