IPW60R190E6 Infineon Technologies, IPW60R190E6 Datasheet - Page 16
![MOSFET N-CH 600V 20.2A TO247](/photos/5/53/55366/448-to-247_sml.jpg)
IPW60R190E6
Manufacturer Part Number
IPW60R190E6
Description
MOSFET N-CH 600V 20.2A TO247
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet
1.IPW60R190E6.pdf
(17 pages)
Specifications of IPW60R190E6
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
20.2A
Vgs(th) (max) @ Id
3.5V @ 630µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 100V
Power - Max
151W
Mounting Type
*
Package / Case
*
Packages
PG-TO247-3
Vds (max)
600.0 V
Package
TO-247
Rds(on) @ Tj=25°c Vgs=10
190.0 mOhm
Id(max) @ Tc=25°c
20.2 A
Idpuls (max)
59.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IPW60R190E6
Manufacturer:
TOSHIBA
Quantity:
30 000
Part Number:
IPW60R190E6
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
600V CoolMOS™ E6 Power Transistor
IPx60R190E6
Package outlines
Figure 3
Outlines TO-220 FullPAK, dimensions in mm/inches
Final Data Sheet
16
Rev. 2.0, 2010-05-03