AT91SAM7SE256B-AUR Atmel, AT91SAM7SE256B-AUR Datasheet - Page 124

IC ARM7 MCU FLASH 256K 128-LQFP

AT91SAM7SE256B-AUR

Manufacturer Part Number
AT91SAM7SE256B-AUR
Description
IC ARM7 MCU FLASH 256K 128-LQFP
Manufacturer
Atmel
Series
AT91SAMr
Datasheet

Specifications of AT91SAM7SE256B-AUR

Core Processor
ARM7
Core Size
16/32-Bit
Speed
55MHz
Connectivity
EBI/EMI, I²C, SPI, SSC, UART/USART, USB
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
88
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
1.65 V ~ 1.95 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
SAM7SE256
Core
ARM7TDMI
Data Bus Width
32 bit
Data Ram Size
32 KB
Interface Type
SPI, USB
Maximum Clock Frequency
48 MHz
Number Of Programmable I/os
88
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 85 C
Processor To Be Evaluated
AT91SAM7SE256B
Supply Current (max)
60 uA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT91SAM7SE256B-AUR
Manufacturer:
Atmel
Quantity:
10 000
20.2.5.3
124
SAM7SE512/256/32 Preliminary
Flash Full Erase Command
The Write Page command (WP) is optimized for consecutive writes. Write handshaking can be
chained; an internal address buffer is automatically increased.
Table 20-7.
The Flash command Write Page and Lock (WPL) is equivalent to the Flash Write Command.
However, the lock bit is automatically set at the end of the Flash write operation. As a lock region
is composed of several pages, the programmer writes to the first pages of the lock region using
Flash write commands and writes to the last page of the lock region using a Flash write and lock
command.
The Flash command Erase Page and Write (EWP) is equivalent to the Flash Write Command.
However, before programming the load buffer, the page is erased.
The Flash command Erase Page and Write the Lock (EWPL) combines EWP and WPL
commands.
This command is used to erase the Flash memory planes.
All lock regions must be unlocked before the Full Erase command by using the CLB command.
Otherwise, the erase command is aborted and no page is erased.
Table 20-8.
Step
1
2
3
4
5
6
7
...
n
n+1
n+2
n+3
n+4
n+5
...
Step
1
2
Handshake Sequence
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
Write handshaking
...
Handshake Sequence
Write handshaking
Write handshaking
Write Command
Full Erase Command
MODE[3:0]
CMDE
ADDR0
ADDR1
ADDR2
ADDR3
DATA
DATA
...
ADDR0
ADDR1
ADDR2
ADDR3
DATA
DATA
...
MODE[3:0]
CMDE
DATA
DATA[15:0]
WP or WPL or EWP or EWPL
32-bit Memory Address First byte
32-bit Flash Address
32-bit Flash Address
32-bit Flash Address Last Byte
*Memory Address++
*Memory Address++
...
32-bit Memory Address First byte
32-bit Flash Address
32-bit Flash Address
32-bit Flash Address Last Byte
*Memory Address++
*Memory Address++
...
DATA[15:0]
EA
0
6222F–ATARM–14-Jan-11

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