QSE133 Fairchild Semiconductor, QSE133 Datasheet - Page 2

• Manufacturer Part Number: QSE133
• Description: Photodetector Transistors Phototransistor Darlington Sidelook
• Manufacturer: Fairchild Semiconductor
• Type: Phototransistorr

Specifications of QSE133

• Maximum Power Dissipation: 100 mW
• Maximum Dark Current: 100 nA
• Collector-emitter Breakdown Voltage: 30 V
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Package / Case: Side Looker
• Transistor Polarity: NPN
• Wavelength Typ: 880nm
• Power Consumption: 100mW
• Viewing Angle: 25°
• No. Of Pins: 2
• No. Of Channels: 1
• Operating Temperature Range: -40°C To +100°C
• Input Current Max: 100µA
• Rohs Compliant: Yes
• Phototransistor Type: PhotoDarlington
• Polarity: NPN
• Number Of Elements: 1
• Lens Type: Black Transparent
• Emitter-collector Voltage (max): 5V
• Collector-emitter Voltage: 30V
• Collector-emitter Sat Volt (max): 1V
• Dark Current (max): 100nA
• Light Current: 9mA
• Rise Time: 20000ns
• Fall Time: 50000ns
• Power Dissipation: 100mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 50deg
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: Side Looker
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 Fairchild Semiconductor Corporation
NOTES:
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5. λ = 880 nm (AlGaAs).
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
Soldering Temperature (Flow)
Collector Emitter Voltage
Emitter Collector Voltage
Power Dissipation
ELECTRICAL / OPTICAL CHARACTERISTICS
Parameter
Peak Sensitivity
Reception Angle
Collector Emitter Dark Current
Collector-Emitter Breakdown
Emitter-Collector Breakdown
On-State Collector Current
Saturation Voltage
Rise Time
Fall Time
(1)
(5)
(5)
(2,3,4)
(2,3)
V
I
I
E
E
I
R
C
E
C
CE
e
e
L
= 100 µA
= 0.15mA, V
= 1 mA
= 0.25 mW/cm
= 0.5 mW/cm
= 100 Ω
= 10 V, E
Test Conditions
(T
A
INFRARED PHOTOTRANSISTOR
= 25°C unless otherwise specified)
e
CC
= 0
2
, I
2
= 5V,
, V
C
Page 2 of 4
= 0.4 mA
CE
= 5 V
(T
A
=25°C unless otherwise specified)
V
Symbol
BV
BV
I
CE(SAT)
I
C(ON)
λ
CEO
Θ
PS
t
CEO
ECO
t
r
f
Symbol
T
T
T
T
SOL-F
V
V
SOL-I
P
OPR
STG
CE
EC
D
PLASTIC SILICON
Min
9.0
30
—
—
—
—
—
—
5
260 for 10 sec
240 for 5 sec
-40 to +100
-40 to +100
Rating
880
±25
Typ
—
—
—
—
—
20
50
100
30
5
Max
100
1.0
—
—
—
—
—
—
—
QSE133
Unit
mW
°C
°C
°C
°C
V
V
Units
Deg.
nM
mA
nA
µs
µs
5/1/02
V
V
V