FOD817D Fairchild Semiconductor, FOD817D Datasheet - Page 2

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FOD817D

Manufacturer Part Number
FOD817D
Description
Transistor Output Optocouplers Phototransistor Output
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FOD817D

Maximum Fall Time
18 us
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
6 V
Maximum Rise Time
18 us
Output Device
Transistor
Output Type
DC
Configuration
1
Input Type
DC
Maximum Collector Emitter Voltage
70 V
Maximum Collector Emitter Saturation Voltage
200 mV
Isolation Voltage
5000 Vrms
Current Transfer Ratio
600 %
Maximum Forward Diode Voltage
1.4 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 110 C
Minimum Operating Temperature
- 55 C
Package / Case
PDIP Black
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
TOTAL DEVICE
EMITTER
DETECTOR
Symbol
T
V
V
T
T
P
OPR
V
P
P
STG
T
CEO
ECO
SOL
TOT
I
I
JC
C
F
R
D
C
J
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Junction Temperature
Junction-to-Case Thermal Resistance
Total Power Dissipation
Continuous Forward Current
Reverse Voltage
Power Dissipation
Collector-Emitter Voltage
Emitter-Collector Voltage
Continuous Collector Current
Collector Power Dissipation
Derate above 100°C
Derate above 90°C
(T
A
= 25°C Unless otherwise specified.)
2
-55 to +105
FOD814
±50
260 for 10 sec
-55 to +150
125 Max.
Value
210
200
150
1.7
2.9
70
70
50
6
-55 to +110
FOD817
50
6
www.fairchildsemi.com
mW/°C
mW/°C
Units
°C/W
mW
mW
mW
mA
mA
°C
°C
°C
°C
V
V

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