BGA 758L7 E6327 Infineon Technologies, BGA 758L7 E6327 Datasheet - Page 10

RF Amplifier RF SILICON MMIC

BGA 758L7 E6327

Manufacturer Part Number
BGA 758L7 E6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon Germanium MMICr
Datasheet

Specifications of BGA 758L7 E6327

Mounting Style
SMD/SMT
Operating Frequency
5 GHz to 6 GHz
P1db
- 3.5 dBm
Noise Figure
1.3 dB
Operating Supply Voltage
4 V
Supply Current
7 mA
Maximum Power Dissipation
48 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Package / Case
TSLP-7-8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA758L7E6327XT
2
2.1
Table 4
Parameter
Pass band frequency range
Gain
Gain flatness
Reverse isolation
Noise figure
Input return loss
Output return loss
Input power at 1dB compression point
Maximum gain out of band
Minimum input 1dB compression
out of band
Turn-on time
Supply current at
Shutdown current
Stability factor
1) Measured on application board according to application schematic on page 12, including PCB losses (unless noted
2) PCB losses subtracted
Preliminary Data Sheet
otherwise)
2)
Electrical Characteristics
Electrical Parameter
Electrical Characteristics
V
CC
1)
Symbol
F
|
Δ
|S
NF
RL
RL
P
|
P
t
I
I
k
S
S
on
CC
off
:
G
BW
-1dB
-1dB
21
21
12
T
in
out
|
|
|
A
2
= 25 °C,
Min.
5.0
5.0
V
10
CC
= 3.3 V,
Typ.
12.5
0.3
21
1.3
18
20
-3.5
-3
1
6
12
4
3
-4
-12
-9
-8
0
0.2
7.0
>1
Values
V
PON,ON
Max.
6.0
9.0
6
= 3.3 V,
Unit
GHz
dB
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
dBm
dBm
μs
mA
μA
V
Electrical Characteristics
PON,OFF
Revision 1.0, 2010-02-22
Note / Test Condition
instantaneous
bandwidth
50 Ω
50 Ω
DC - 1.7 GHz
1.7 - 2.0 GHz
2.3 - 2.7 GHz
3.3 - 3.9 GHz
9.0 - 10 GHz
10 - 18 GHz
0.8 - 1.0 GHz
1.7 - 2.0 GHz
2.3 - 4.0 GHz
4.4 - 4.5 GHz
9.0 - 10 GHz
Measured from ON
signal turns on (90%)
to the point were LNA
output power stabilizes
to within 0.5 dB of final
value
V
Unconditional stable
for all frequencies
In any 50 MHz
PON
= 0 V,
= 0 V
BGA758L7
f
= 5.5 GHz

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