BSM200GAL120DN2 Infineon Technologies, BSM200GAL120DN2 Datasheet - Page 5

• Manufacturer Part Number: BSM200GAL120DN2
• Description: IGBT Modules 1200V 200A GAL CH
• Manufacturer: Infineon Technologies

Specifications of BSM200GAL120DN2

• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.5 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 400 nA
• Power Dissipation: 1.4 KW
• Maximum Operating Temperature: + 150 C
• Maximum Gate Emitter Voltage: 20 V
• Mounting Style: Screw
• Package / Case: HB 200GAL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT-Module
IGBT-Modules
Technische Information / Technical Information
Anhang C-Serie
Appendix C-series
Gehäusemaße C-Serie
Package outline C-series
Gehäuse spezifische Werte
Housing specific values
stray inductance module
Modulinduktivität
BSM200GAL120DN2
Appendix C-series
L
sCE
typ.
20
nH
Appendix_C-Serie_BSM200GAL120DN2
2004-08-02